Growth and fabrication issues of GaSb-based detectors

Journal of Materials Science: Materials in Electronics

Volumn 20, Issue 11, 2009, Pages 1039-1058

  Mohammedy, Farseem M ^a   Deen, M Jamal ^b  

^a BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONIDES; ARBITRARY COMPOSITIONS; AVALANCHE PHOTODETECTORS; CHEMICAL DEPOSITION; DETECTION WAVELENGTHS; DETECTIVITY; DEVICE DESIGNERS; GROWTH TECHNIQUES; HIGH-SPEED; INFRARED APPLICATIONS; KEY COMPONENT; LOW NOISE; METAMORPHIC GROWTH; PROCESSING STEPS; RESEARCH AND TECHNOLOGY DEVELOPMENT; RESISTANCE-AREA PRODUCTS; SEMICONDUCTING LAYER; SEMICONDUCTING MATERIALS; SIDE WALLS; SURFACE LEAKAGE; SURFACE RESISTIVITY; ZERO-BIAS;

CHEMICAL BEAM EPITAXY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DETECTORS; GALLIUM ALLOYS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTOELECTRONIC DEVICES; PASSIVATION; PHOTODETECTORS; SEMICONDUCTOR GROWTH; SULFUR; SURFACES; TECHNOLOGICAL FORECASTING;

SEMICONDUCTING ANTIMONY;

EID: 70349435949     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-009-9927-y     Document Type: Review

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