Carrier compensation and scattering mechanisms in p-GaSb

Journal of Applied Physics

Volumn 80, Issue 5, 1996, Pages 2847-2853

  Dutta, P S ^a   Prasad, V ^a   Bhat, H L ^a   Kumar, Vikram ^b  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001170869     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363135     Document Type: Article

References (38)

1. A. Sagar, Phys. Rev. 117, 93 (1960).
2. A. J. Strauss, Phys. Rev. 121, 1087 (1961).
3. T. O. Yep and W. M. Becker, J. Appl. Phys. 37, 456 (1966).
4. R. D. Baxter and F. J. Reid, Bull. Am. Phys. Soc. 10, 599 (1965).
5. D. Long and R. J. Hager, J. Appl. Phys. 36, 3436 (1965).
6. D. Long, J. D. Zook, P. W. Chapman, and O. N. Tufte, Solid State Commun. 2, 191 (1964).
7. R. D. Baxter, F. J. Reid, and A. C. Beer, Phys. Rev. 162, 718 (1967).
8. H. Brooks, Advances in Electronics and Electron Physics (Academic, New York, 1955), Vol. 7, p. 156.
9. J. Johnson, I. Filinski, and H. Y. Fan, Report of the International Conference on the Physics of Semiconductors, Exeter, 1962 (The Institute of Physics and The Physical Society, London, 1962), p. 375.
10. A. I. Lebedev and I. A. Strel'nikova, Sov. Phys. Semicond. 13, 229 (1979).
11. G. R. Johnson, B. C. Cavenett, T. M. Kerr, P. B. Kirby, and C. E. C. Wood, Semicond. Sci. Technol. 3, 1157 (1988).
12. K. Nakashima, Jpn. J. Appl. Phys. 20, 1085 (1981).
13. M. A. Habegger and H. Y. Fan, Phys. Rev. 138, 598 (1965).
14. I. K. Lazareva and V. M. Stuchebnikov, Sov. Phys. Semicond. 4, 550 (1970).
15. A. S. Kyuregyan, I. K. Lazareva, V. M. Stuchebnikov, and A. E. Yunovich, Sov. Phys. Semicond. 6, 208 (1972).
16. M. D'Olne Campos, A. Gouskov, L. Gouskov, and J. C. Pons, Phys. Status Solidi A 2, 779 (1970).
17. S. Basu, U. N. Roy, B. M. Arora, and A. K. Srivastava, Appl. Surf. Sci. 59, 159 (1992).
18. P. S. Dutta, K. S. Sangunni, H. L. Bhat, and V. Kumar, J. Cryst. Growth 141, 44 (1994).
19. M. Reghu, Ph. D. thesis, Indian Institute of Science, 1990.
20. P. S. Dutta, K. S. R. Koteswara Rao, H. L. Bhat, and V. Kumar, Appl. Phys. A 61, 149 (1995).
21. D. Weiler and H. Mehrer, Philos. Mag. A 49, 309 (1984).
22. C. Woelk and K. W. Benz, J. Cryst. Growth 27, 177 (1974).
23. W. Jakowetz, W. Ruhle, K. Breuninger, and M. H. Pilkuhn, Phys. Status Solidi A 12, 169 (1972).
24. D. Effer and P. J. Etter, J. Phys. Chem. Solids 25, 451 (1964).
25. P. C. Mathur and S. Jain, Phys. Rev. B 19, 3152 (1979).
26. M. W. Heller and R. G. Hamerly, J. Appl. Phys. 57, 4626 (1985).
27. G. Dresselhaus, A. F. Kip, and C. Kittel, Phys. Rev. 98, 368 (1955).
28. J. L. Robert, B. Pistoulet, D. Barjon, and A. Raymond, J. Phys. Chem. Solids 34, 2221 (1973).
29. J. Kolodziejczak, S. Zukotynski, and H. Stramska, Phys. Status Solidi 14, 471 (1966).
30. E. O. Kane, J. Phys. Chem. Solids 1, 249 (1957).
31. D. Kranzer, Phys. Status Solidi A 26, 11 (1974).
32. J. D. Wiley, in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1975), Vol. 10, p. 91.
33. G. I. Bir, E. Normantus, and G. E. Pikus, Sov. Phys. Solid State 4, 867 (1962).
34. S. A. Teukolsky, W. T. Vellering, and B. B. Flannery, Numerical Recipes in Fortran, 2nd ed. (Cambridge University Press, Cambridge, 1993).
35. Y. Takeda and T. P. Pearsal, Electron. Lett. 20, 573 (1981).
36. I. D. Wiley, Phys. Rev. B 4, 2485 (1971).
37. I. D. Wiley and D. DiDomenico, Phys. Rev. B 2, 427 (1970).
38. J. Basinski, D. J. E. Demars, and J. C. Woolley, J. Phys. C 7, 716 (1974).