Etching of Ga-based III-V semiconductors in inductively coupled Ar and CH4/H2-based plasma chemistries

Plasma Sources Science and Technology

Volumn 6, Issue 4, 1997, Pages 499-507

  Lee, J W ^a   Abernathy, C R ^a   Pearton, S J ^a   Constantine, C ^b   Shu, R J ^c   Hobson, W S ^d  

^a University of Florida   (United States)

^b Plasma Therm IP   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ELECTRIC DISCHARGES; HYDROGEN; METHANE; NITROGEN; PLASMA SOURCES; SEMICONDUCTING GALLIUM COMPOUNDS;

INDUCTIVELY COUPLED PLASMA (ICP) ETCHING;

PLASMA ETCHING;

EID: 0031271992     PISSN: 09630252     EISSN: None     Source Type: Journal    
DOI: 10.1088/0963-0252/6/4/007     Document Type: Article

References (25)

1. Asmussen J and Mak P 1994 Rev. Sci. Instrum. 65 1753
2. See for example Popov O ed 1996 High Density Plasma Sources (Englewood Cliffs, NJ: Noyes)
3. Rossnagel S M, Cuomo J J and Westwood W D 1996 Handbook of Plasma Processing (Englewood Cliffs, NJ: Noyes)
4. Lieberman M A and Lichtenburg A J 1994 Principles of Plasma Discharges and Materials Processing (New York: Wiley-Interscience)
5. Lieberman M A and Gottscho R A 1994 Physics of Thin Films vol 18, ed M H Francombe and J L Vossen (New York: Academic)
6. Gill A 1994 Cold Plasma in Materials Fabrication (New York: IEEE)
7. Godgil P K, Montei T D and Mu X C 1994 J. Vac. Sci. Technol. B 12 102
8. Hoverlag M, Oehrlein G S and Vender D 1994 J. Vac. Sci. Technol. B 12 96
9. Tepermeister I, Blayo N, Klemens F P, Ibbotson D E, Gottscho R A, Lee J T C and Sawin H H 1994 J. Vac. Sci. Technol. 12 2310
10. Quick A K, Chen R T S and Hershkowitz N 1996 J. Vac. Sci. Technol. A 14 1041
11. Shul R J, McClellan G B, Casalnuovo S A, Rieger D J, Pearton S J, Constantine C, Barratt C, Kaslicek R F, Tran C and Schurman M 1996 Appl. Phys. Lett. 69 1119
12. Lee H-J, Kim J-H, Whang K-W and Joo J-H 1996 J. Vac. Sci. Technol. A 14 1007
13. Collins S M, Brown D A, O'Hanlon J F and Carlile R N 1996 J. Vac. Sci. Technol. A 14 634
14. Hori T, Bowden M D, Uchino K, Muraoka K and Maeda M 1996 J. Vac. Sci. Technol. A 14 144
15. Yamada N, Vartek P L G, Date H, Sakai Y and Tagashira H 1996 J. Vac. Sci. Technol A 14 2859
16. Pearton S J, Chakrabarti U K, Perley A and Hobson W S 1991 J. Elecirochem. Soc. 138 1432
17. Pereira R, Jouckheere R and Vanderssum M 1991 J. Vac. Sci. Technol. B 9 1978
18. Henry L, Vaudry C and Granjoux P 1987 Electron. Lett. 23 1253
19. McLane G F, Cole M W, Eckart D W, Cooke P, Moerkirk R and Meyyappan M 1993 J. Vac. Sci. Technol. A 11 1753
20. Pearton S J 1996 Mater. Sci. Eng. B 40 101
21. Etrillard J, Heliot F, Ossart P, Juhel M, Patriarche G, Carcenac P, Vieu C, Puech M and Maguin P 1996 J. Vac. Sci. Technol. A 14
22. Abemathy C R 1995 Mater. Sci. Eng. Rep. 14 203
23. Hobson W S 1993 Mat. Res. Soc. Symp. Proc. 300 75
24. Ashby C I H 1997 Properties of GaAs (London; INSPEC, IEE). This is a review of published ion mill and dry etch rates for GaAs.
25. Pearton S J, Lee J W, Lambers E S, Mileham J R, Abernathy C R, Hobson W S, Ren F and Shul R J 1996 J. Vac. Sci, Technol. B 14 118