SCOPUS 정보 검색 플랫폼

Volumn 86, Issue 17, 2005, Pages 1-3

Passivation of InAs/(GaIn) Sb short-period superlattice photodiodes with 10 μm cutoff wavelength by epitaxial overgrowth with AlxGa 1-xAsySb1-y

(5) Rehm, Robert a Walther, Martin a Fuchs, Frank a Schmitz, Johannes a Fleissner, Joachim a

a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FERMI LEVEL; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; PHOTODIODES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS;

BAND-GAP MATERIALS; DIELECTRIC MATERIAL EFFECTS; ELECTRON ACCUMULATION; SINGLE PIXEL ELEMENTS;

SUPERLATTICES;

EID: 20844441411 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1906326 Document Type: Article

Times cited : (128)

References (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.