Comparison of dry etching techniques for III-V semiconductors in CH4/H2/Ar plasmas

Journal of the Electrochemical Society

Volumn 143, Issue 2, 1996, Pages 752-758

  Pearton, S J ^a   Lee, J W ^a   Lambers, E S ^a   Abernathy, C R ^a   Ren, F ^b   Hobson, W S ^b   Shul, R J ^c  

^a UNIVERSITY OF FLORIDA   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DESORPTION; DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; HYDROGEN; MORPHOLOGY; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STOICHIOMETRY; SURFACE ROUGHNESS;

ATOMIC FORCE MICROSCOPY MEASUREMENTS; AUGER ELECTRON SPECTROSCOPY MEASUREMENTS; SPUTTER INDUCED DESORPTION;

SEMICONDUCTOR PLASMAS;

EID: 0030085008     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836513     Document Type: Review

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