Effect of growth temperature on InGaSb metamorphic layers and the fabrication of InGaSb p-i-n diodes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 2, 2008, Pages 636-642

  Mohammedy, F M ^a   Hulko, O ^b   Robinson, B J ^b   Thompson, D A ^b   Deen, M J ^a  

^a MCMASTER UNIVERSITY   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH TEMPERATURE; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; X RAY DIFFRACTION ANALYSIS;

METAMORPHIC LAYERS; P-I-N DIODES;

DIODES;

EID: 41549102471     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2898493     Document Type: Article

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