Growth and characterization of metamorphic inx(AlGa)1-xAs/InxGa1-xAs high electron mobility transistor material and devices with X=0.3-0.4

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1638-1641

  Hoke, W E ^a   Lyman, P S ^a   Whelan, C S ^a   Mosca, J J ^a   Torabi, A ^a   Chang, K L ^b   Hsieh, K C ^b  

^a RAYTHEON COMPANY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; EMISSION SPECTROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

INDIUM ALUMINUM GALLIUM ARSENIDE; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (MHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034187904     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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