A comparison of dry plasma and wet chemical etching of GaSb photodiodes

Journal of the Electrochemical Society

Volumn 151, Issue 5, 2004, Pages

  Bhagwat, Vinay ^a   Langer, J P ^a   Bhat, Ishwara ^a   Dutta, P S ^a   Refaat, Tamer ^b   Abedin, M Nurul ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b CREST

^c NASA LANGLEY RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRON CYCLOTRON RESONANCE; LEAKAGE CURRENTS; OPTICAL PROPERTIES; PHOTODIODES; PLASMA ETCHING; SEMICONDUCTOR JUNCTIONS;

MID-INFRARED (MIR) WAVELENGTHS; SPECTRAL RESPONSIVITY; WET CHEMICAL ETCHING;

GALLIUM COMPOUNDS;

EID: 2942586817     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1691551     Document Type: Article

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