The growth of n-type GaSb by metal-organic chemical vapour deposition: Effects of two-band conduction on carrier concentrations and donor activation

Semiconductor Science and Technology

Volumn 19, Issue 8, 2004, Pages 953-958

  Cederberg, J G ^a   Biefeld, R M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CARRIER CONCENTRATION; ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTIVITY; ELECTRONS; FERMI LEVEL; LOW TEMPERATURE PHENOMENA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; PHOTOVOLTAIC CELLS; SECONDARY ION MASS SPECTROMETRY; TELLURIUM;

DONORS; DOPANT PRECURSORS; MID-INFRARED SPECTRAL RANGE (MIR); PAUW-HALL EFFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 4043081186     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/8/001     Document Type: Article

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