Ultralow noise midwave infrared InAs-GaSb strain layer superlattice avalanche photodiode

Applied Physics Letters

Volumn 91, Issue 24, 2007, Pages

  Mallick, Shubhrangshu ^a   Banerjee, Koushik ^a   Ghosh, Siddhartha ^a   Plis, Elena ^b   Rodriguez, Jean Baptiste ^b   Krishna, Sanjay ^b   Grein, Christoph ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ARSENIDE; INFRARED RADIATION; IONIZATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR SUPERLATTICES; WAVELENGTH;

HOMOJUNCTION AVALANCHE PHOTODIODES; SINGLE CARRIER ELECTRON; STRAIN LAYER SUPERLATTICE; ULTRALOW NOISE MIDWAVE INFRARED;

AVALANCHE PHOTODIODES;

EID: 37149031267     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2817608     Document Type: Article

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