Properties of metamorphic materials and device structures on GaAs substrates

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 804-810

  Hoke, W E ^a   Kennedy, T D ^a   Torabi, A ^a   Whelan, C S ^a   Marsh, P F ^a   Leoni, R E ^a   Lardizabal, S M ^a   Zhang, Y ^a   Jang, J H ^b   Adesida, I ^b   Xu, C ^b   Hsieh, K C ^b  

^a RAYTHEON COMPANY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

A1. Line defects; A3. Molecular beam epitaxy; B2. Semiconducting ternary materials; B3. High electron mobility transistors

Indexed keywords

APPROXIMATION THEORY; ATOMIC FORCE MICROSCOPY; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; OPTICAL DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

METAMORPHIC MATERIALS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037380496     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02374-6     Document Type: Conference Paper

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