Material properties and performance of metamorphic optoelectronic integrated circuits grown by molecular beam epitaxy on GaAs substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1554-1557

  Hoke, W E ^a   Leoni, R E ^a   Whelan, C S ^a   Kennedy, T D ^a   Torabi, A ^a   Marsh, P F ^a   Zhang, Y ^a   Xu, C ^b   Hsieh, K C ^b  

^a RAYTHEON COMPANY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; DEPOSITION; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PHOTODIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

DEVICE INTERCONNECTS; METAMORPHIC BUFFER LAYERS; MONOLITHIC INTEGRATION; PIN PHOTODIODE;

INTEGRATED OPTOELECTRONICS;

EID: 3242704165     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1669585     Document Type: Conference Paper

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