Mid-IR focal plane array based on type-II InAsGaSb strain layer superlattice detector with nBn design

Applied Physics Letters

Volumn 92, Issue 18, 2008, Pages

  Kim, H S ^a   Plis, E ^a   Rodriguez, J B ^a,c   Bishop, G D ^a   Sharma, Y D ^a   Dawson, L R ^a   Krishna, S ^a   Bundas, J ^b   Cook, R ^b   Burrows, D ^b   Dennis, R ^b   Patnaude, K ^b   Reisinger, A ^b   Sundaram, M ^b  

^a University of New Mexico   (United States)

^b QmagiQ LLC   (United States)

^c UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; QUANTUM EFFICIENCY; STRAIN; SUPERLATTICES; VALENCE BANDS;

NOISE EQUIVALENT TEMPERATURE; PN JUNCTION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 43349103640     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2920764     Document Type: Article

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