Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction P-i-I-N photodiodes

Journal of Lightwave Technology

Volumn 20, Issue 3, 2002, Pages 507-514

  Jang, Jae Hyung ^b   Cueva, Gabriel ^b   Hoke, William E ^c   Lemonias, P J ^c   Fay, Patrick ^a,d   Adesida, Ilesanmi ^a,b  

^a IEEE   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c RAYTHEON COMPANY   (United States)

^d University of Notre Dame   (United States)

Author keywords

Drift region; GaAs; InGaAs; InP; Metamorphic; P i I N; P i N; Photodiodes; Superlattice graded bandgap layer

Indexed keywords

DRIFT REGION; METAMORPHIC; SUPERLATTICE GRADED BANDGAP LAYER;

BANDWIDTH; ENERGY GAP; HETEROJUNCTIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SUPERLATTICES;

PHOTODIODES;

EID: 0036504875     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.989001     Document Type: Article

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