1/f Noise in drain and gate current of MOSFETs with high-k gate stacks

IEEE Transactions on Device and Materials Reliability

Volumn 9, Issue 2, 2009, Pages 180-189

  Magnone, P ^a   Crupi, F ^a   Giusi, G ^a   Pace, C ^a   Simoen, E ^b   Claeys, C ^b,c   Pantisano, L ^b   Maji, D ^d   Rao, V Ramgopal ^d   Srinivasan, P ^e  

^a UNIVERSITY OF CALABRIA   (Italy)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^e TEXAS INSTRUMENTS   (United States)

Author keywords

1 f noise; Drain noise; Gate noise; High k dielectric; MOSFET

Indexed keywords

1/F NOISE; DRAIN NOISE; GATE NOISE; HIGH-K DIELECTRIC; MOSFET;

DIELECTRIC MATERIALS; DRAIN CURRENT; ELECTROCHEMICAL ELECTRODES; GATES (TRANSISTOR); LOGIC GATES; MOSFET DEVICES;

GATE DIELECTRICS;

EID: 67650407666     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2009.2020406     Document Type: Article

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