Low-frequency (1/f) noise behavior of locally stressed HfO2/ TiN gate-stack pMOSFETs

IEEE Electron Device Letters

Volumn 27, Issue 6, 2006, Pages 508-510

  Giusi, G ^a,b   Simoen, E ^a   Eneman, G ^a,c,d   Verheyen, P ^a   Crupi, F ^e   De Meyer, K ^a,c   Claeys, C ^a,c   Ciofi, C ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF MESSINA   (Italy)

^c Katholieke Universiteit Leuven   (Belgium)

^d FUND FOR SCIENTIFIC RESEARCH   (Belgium)

^e UNIVERSITY OF CALABRIA   (Italy)

Author keywords

Local strain; Low frequency (LF) noise; Number fluctuations; pMOSFETs

Indexed keywords

COMPRESSIVE STRESS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; TITANIUM NITRIDE;

COMPRESSIVE-STRAIN ENGINEERING; LOCAL STRAIN; LOW-FREQUENCY (LF) NOISE; NUMBER FLUCTUATIONS;

MOSFET DEVICES;

EID: 33744820856     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.875758     Document Type: Article

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