Low frequency noise in nMOSFETs with subnanometer EOT hafnium-based gate dielectrics

Microelectronics Reliability

Volumn 47, Issue 12, 2007, Pages 2109-2113

  Magnone, P ^a   Pace, C ^a,b   Crupi, F ^a,b   Giusi, G ^b  

^a UNIVERSITY OF CALABRIA   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DRAIN CURRENT; ELECTRIC POTENTIAL; INTERFACES (MATERIALS); MOSFET DEVICES;

EQUIVALENT OXIDE THICKNESS; LOW FREQUENCY NOISES; NORMALIZED DRAIN NOISES; SUBNANOMETERS;

GATE DIELECTRICS;

EID: 35548942186     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.11.001     Document Type: Article

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