Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 54-57

  Martinez, F ^a   Leyris, C ^a,b   Neau, G ^a,b   Valenza, M ^a   Hoffmann, A ^a   Vildeuil, J C ^b   Vincent, E ^b   Boeuf, F ^b   Skotnicki, T ^b   Bidaud, M ^c   Barge, D ^c   Tavel, B ^c  

^a UNIV MONTPELLIER   (France)

^b STMICROELECTRONICS   (France)

^c PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

1 Fnoise; MOSFETs; R.T.S. fluctuations

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; CORRELATION METHODS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); INTERFACES (MATERIALS); SPURIOUS SIGNAL NOISE;

1/F NOISE; DRAIN CURRENT; GATE DIELECTRIC; RANDOM TELEGRAPH SIGNAL (RTS) FLUCTUATIONS;

MOSFET DEVICES;

EID: 19944369438     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.043     Document Type: Conference Paper

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