Comprehensive noise performance of ultrathin oxide MOSFETs at low frequencies

Solid-State Electronics

Volumn 48, Issue 1, 2004, Pages 61-71

  Lee, Jonghwan ^a   Bosman, Gijs ^a  

^a University of Florida   (United States)

Author keywords

Cross correlation coefficient; Gate tunneling leakage current; Low frequency noise; Partition noise theory; Ultrathin oxide MOSFETs

Indexed keywords

COMPUTER SIMULATION; CORRELATION METHODS; LEAKAGE CURRENTS;

LOW FREQUENCY NOISE;

MOSFET DEVICES;

EID: 0142185218     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00237-5     Document Type: Article

References (25)

1. Momose H.S., Ono M., Yoshitomi T., Ohguro T., Nakamura S., Saito M.et al. 1.5 nm direct-tunneling gate oxide Si MOSFETs. IEEE Trans. Electron Dev. 43(8):1996;1233-1242.
2. Momose H.S.et al. A study of flicker noise in n- and p-MOSFETs with ultrathin gate oxide in the direct-tunneling regime. IEDM Tech. Dig. 1998;923-926.
3. 2. Semicond. Sci. Technol. 9:1994;989-1004.
4. Lee JH, Bosman G, Green KR, Ladwig D. Gate leakage current noise in ultrathin gate oxide MOSFETs. In: Proceedings of the 16th International Conference on Noise in Physical Systems and 1/f Fluctuations, 2001, pp.165-168.
5. Klumperink E.A.M.et al. Reducing MOSFET. 1/f noise and power consumption by switched biasing IEEE J. Solid-State Circ. 35(7):2000;994-1001.
6. Danneville F., Dambrine G., Happy H., Tadyszak P., Cappy A. Influence of the gate leakage current on the noise performance of MESFETs and MODFETs. Solid State Electron. 38(5):1995;1081-1087.
7. van der Ziel A. Noise in Solid State Devices and Circuits. 1986;Wiley, New York.
8. Cappy A. Noise modeling and measurement techniques. IEEE Trans. Microwave Theory Tech. 36(1):1988;1-10.
9. Jarrix S., Delseny C., Pascal F., Lecoy G. Noise correlation measurements in bipolar transistors. I. Theoretical expressions and extracted current spectral densities. J. Appl. Phys. 81(6):1997;2651-2657.
10. Delseny C., Pascal F., Jarrix S., Lecoy G. Noise correlation measurements in bipolar transistors. II. Correlation between base and collector currents. J. Appl. Phys. 81(6):1997;2658-2664.
11. Mourier Y., Jarrix S., Delseny C., Pascal F., Penarier A., Gasquet D. Characterization of polysilicon bipolar transistors by low-frequency noise and correlation noise measurements. Semicond. Sci. Technol. 16:2001;233-238.
12. Bruce S.P.O., Vandamme L.K.J., Rydberg A. Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers. IEEE Trans. Electron Dev. 46(5):1999;993-1000.
13. Bruce S., Vandamme L.K.J., Rydberg A. Improved correlation measurements using voltage and transimpedance amplifiers in low-frequency noise characterization of bipolar transistors. IEEE Trans. Electron Dev. 47(9):2000;1772-1773.
14. Vandamme L.K.J., Rigaud D., Peransin J.M. Coherence between gate- and drain-crrent fluctuations in MESFET's and MODFET's biased in the ohmic region. IEEE Trans. Electron Dev. 39(10):1992;2377-2382.
15. Pucel R.A., Haus H.A., Statz H. Signal and noise properties of gallium arsenide field effect transistors. Adv. Electron. Electron Physics. 38:1974;195-265.
16. van der Ziel A., Hsieh C.J., Handel P.H., Van Vliet C.M., Bosman G. Partition. 1/f noise in vacuum pentodes Physica. 124B:1984;299-304.
17. van der Ziel A., Hsieh C.J., Handel P.H., Van Vliet C.M., Bosman G. Partition. 1/f noise in pentodes and its quantum interpretation Physica. 145B:1987;195-204.
18. Rigaud D., Valenza M. Correlation measurement of carrier multiplication noise sources in MOS transistors at low frequencies. IEEE Trans. Electron Dev. 41(11):1994;2076-2081.
19. Cao K.M., Lee W.C., Liu W., Jin X., Su P., Fung S.K.H.et al. BSIM4 gate leakage model including source-drain partition. IEDM Tech. Dig. 2000;815-818.
20. Hung K.K., Ko P.K., Hu C., Cheng Y.C. A physics-based MOSFET noise model for circuit simulators. IEEE Trans. Electron Dev. 37(5):1990;1323-1333.
21. Klaassen F.M. Characterization of low. 1/f noise in MOS transistors IEEE Trans. Electron Dev. 18(10):1971;887-891.
22. Rao P.S., van der Ziel A. Noise and. y -parameters in MOSFETs Solid State Electron. 14:1971;939-944.
23. Taur Y., Ning T.H. Fundamentals of modern VLSI devices. 1998;University Press, Cambridge.
24. Chen M.J., Kang T.K., Lee Y.H., Liu C.H., Chang Y.J., Fu K.Y. Low-frequency noise in. n -channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown J. Appl. Phys. 89(1):2001;648-653.
25. Jones B.K., Graham C.N., Konczakowska A., Hasse L. The coherence of the gate and drain noise in stressed AlGaAs-InAlGaAs PHEMTs. Microelectron. Reliab. 41:2001;87-97.