On the impact of defects close to the gate electrode on the low-frequency 1/f noise

IEEE Electron Device Letters

Volumn 29, Issue 9, 2008, Pages 1056-1058

  Magnone, Paolo ^a   Pantisano, Luigi ^b   Crupi, Felice ^a   Trojman, Lionel ^b,c   Pace, Calogero ^a   Giusi, Gino ^a  

^a UNIVERSITY OF CALABRIA   (Italy)

^b IMEC   (Belgium)

^c Katholieke Universiteit Leuven   (Belgium)

Author keywords

1 f noise; Fermi level pinning; High k gate dielectrics

Indexed keywords

HAFNIUM COMPOUNDS;

1/F NOISE; FERMI-LEVEL PINNING; GATE ELECTRODES; HIGH-K GATE DIELECTRICS;

REFRACTORY METAL COMPOUNDS;

EID: 50649113086     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2001551     Document Type: Article

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