Overview of the impact of downscaling technology on 1/f noise in p-MOSFETs to 90 nm

IEE Proceedings: Circuits, Devices and Systems

Volumn 151, Issue 2, 2004, Pages 102-110

  Valenza, M ^a   Hoffmann, A ^a   Sodini, D ^a   Laigle, A ^a   Martinez, F ^a   Rigaud, D ^a  

^a UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); LEAKAGE CURRENTS; MATHEMATICAL MODELS; SPURIOUS SIGNAL NOISE;

GATE CURRENT NOISE; GATE INSULATOR;

MOSFET DEVICES;

EID: 2942652870     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20040459     Document Type: Article

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