Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics

IEEE Transactions on Electron Devices

Volumn 53, Issue 4, 2006, Pages 823-828

  Giusi, Gino ^a   Crupi, Felice ^b   Pace, Calogero ^b   Ciofi, Carmine ^a   Groeseneken, Guido ^c,d  

^a UNIVERSITY OF MESSINA   (Italy)

^b UNIVERSITY OF CALABRIA   (Italy)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

CMOS reliability; High gate dielectric; Low frequency noise

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM; POLYSILICON; RELIABILITY; SUBSTRATES;

CMOS RELIABILITY; GATE LOW-FREQUENCY NOISE; HAFNIUM-BASED GATE DIELECTRICS; LOW-FREQUENCY NOISE;

MOSFET DEVICES;

EID: 33645798318     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.870287     Document Type: Article

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