On the dc and noise properties of the gate current in epitaxial Ge p -channel metal oxide semiconductor field effect transistors with TiNTaNHf O2 Si O2 gate stack

Applied Physics Letters

Volumn 92, Issue 16, 2008, Pages

  Maji, Debabrata ^a   Crupi, Felice ^b   Giusi, Gino ^b   Pace, Calogero ^b   Simoen, Eddy ^c   Claeys, Cor ^c   Rao, V Ramgopal ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b UNIVERSITY OF CALABRIA   (Italy)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM COMPOUNDS; MOSFET DEVICES; NOISE ABATEMENT; TITANIUM COMPOUNDS;

GATE CURRENT; GATE STACK; NOISE PROPERTIES;

ELECTRIC CURRENTS;

EID: 42549117586     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2916821     Document Type: Article

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