Low-frequency noise in submicrometer MOSFETs with HfO2, HfO2/Al2O3 and HfAlOx gate stacks

IEEE Transactions on Electron Devices

Volumn 51, Issue 8, 2004, Pages 1315-1322

  Min, Bigang ^a   Devireddy, Siva Prasad ^a   Çelik Butler, Zeynep ^a   Wang, Fang ^b   Zlotnicka, Ania ^b   Tseng, Hsing Huang ^c   Tobin, Philip J ^c  

^a University of Texas at Arlington   (United States)

^b MOTOROLA INC   (United States)

^c MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; DIELECTRIC MATERIALS; ELECTRON MOBILITY; ELECTRON TUNNELING; GAUSSIAN NOISE (ELECTRONIC); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SILICA; SUBSTRATES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

FLICKER NOISE; HAFNIUM ALUMINUM OXIDE; HAFNIUM OXIDE; HIGH DIELECTRICS; LOW FREQUENCY NOISE; TUNNELING COEFFICIENT;

MOSFET DEVICES;

EID: 3943054083     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.832821     Document Type: Article

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