Fermi-level pinning at polycrystalline silicon-Hf O2 interface as a source of drain and gate current 1f noise

Applied Physics Letters

Volumn 90, Issue 7, 2007, Pages

  Magnone, P ^a,b   Crupi, F ^a,c   Pantisano, L ^b   Pace, C ^a,c  

^a UNIVERSITY OF CALABRIA   (Italy)

^b IMEC   (Belgium)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); POLYSILICON;

HIGH- K LAYERS; LOW FREQUENCY NOISE; METAL OXIDE SEMICONDUCTORS;

FERMI LEVEL;

EID: 33847178014     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2472716     Document Type: Article

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