Three-dimensional FinFET source/drain and contact design optimization study

IEEE Transactions on Electron Devices

Volumn 56, Issue 7, 2009, Pages 1483-1492

  Vega, Reinaldo A ^a   Liu, Tsu Jae King ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Capacitance; Dopant segregation; FinFET; Metallic source drain (MSD); Raised source drain (RSD); Schottky barrier (SB)

Indexed keywords

DOPANT SEGREGATION; FINFET; METALLIC SOURCE/DRAIN (MSD); RAISED SOURCE/DRAIN (RSD); SCHOTTKY BARRIER (SB);

CAPACITANCE; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); FORCED CONVECTION; OPTIMIZATION; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SILICIDES; THREE DIMENSIONAL;

SEMICONDUCTOR SWITCHES;

EID: 67650158420     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2021439     Document Type: Article

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