Plasma doping induced damages associated with source/drain formation in three-dimensional beam-channel MOS transistor

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 1631-1634

  Kobayashi, Kei ^a   Okuyama, Kiyoshi ^a   Sunami, Hideo ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Beam channel transistor; Plasma doping; Silicon on insulator; Source and drain

Indexed keywords

ION BOMBARDMENT; MOSFET DEVICES; PLASMAS; SILICON ON INSULATOR TECHNOLOGY;

BEAM-CHANNEL TRANSISTOR; PLASMA BOMBARDMENT; PLASMA DOPING;

SEMICONDUCTOR DOPING;

EID: 34247626871     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.259     Document Type: Article

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