Experimental study on performance improvement in dopant-segregated Schottky metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics

Volumn 47, Issue 1, 2008, Pages 99-103

  Nishi, Yoshifumi ^a   Kinoshita, Atsuhiro ^a   Hagishima, Daisuke ^a   Koga, Junji ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Dopant segregation; Impact ionization; Parasitic resistance; Schottky barrier MOSFET; Short channel effect

Indexed keywords

HOT CARRIERS; IMPACT IONIZATION; MESFET DEVICES; SCHOTTKY BARRIER DIODES;

CARRIER INJECTION VELOCITY; DOPANT SEGREGATION; PARASITIC RESISTANCE; SHALLOWER JUNCTION DEPTH;

MOS DEVICES;

EID: 38549148720     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.99     Document Type: Article

References (13)

1. J. R. Tucker, C. Wang, and P. S. Charney: Appl. Phys. Lett. 65 (1994) 618.
2. J. P. Snyder, C. R. Helms, and Y. Nishi: Appl. Phys. Lett. 67 (1995) 1420.
3. M. Nishisaka and T. Asano: Jpn. J. Appl. Phys. 37 (1998) 1295.
4. K. Uchida, K. Matsuzawa, J. Koga, S. Takagi, and A. Toriumi: Appl. Phys. Lett. 76 (2000) 3992.
5. J. Kedzierski, P. Xuan, E. H. Anderson, J. Bokor, T.-J. King, and C. Hu: IEDM Tech. Dig., 2000, p. 57.
6. A. Kinoshita, Y. Tsuchiya, A. Yagishita, K. Uchida, and J. Koga: Tech. Dig. 2004 Symp. VLSI Technology, p. 168.
7. A. Kinoshita, C. Tanaka, K. Uchida, and J. Koga: Tech. Dig. 2005 Symp. VLSI Technology, p. 158.
8. A. Kinoshita, T. Kinoshita, Y. Nishi, K. Uchida, S. Toriyama, R. Hasumi, and J. Koga: IEDM Tech. Dig., 2006, p. 158.
9. T. Y. Chan, P. K. Ko, and C. Hu: IEEE Electron Device Lett. 5 (1984) 505.
10. T. Y. Chan, P. K. Ko, and C. Hu: IEEE Elecctron Device Lett. 6 (1985) 551.
11. K. Terada and H. Muta: Jpn. J. Appl. Phys. 18 (1979) 953.
12. Y. Taur, Y.-J. Mii, R. Logan, and H.-S. Wong: IEEE Eletron Device Lett. 16 (1995) 136.
13. S.-D. Kim, S. Narasimha, and K. Rim: IEDM Tech. Dig., 2005, p. 155.