Tuning of suicide Schottky barrier heights by segregation of sulfur atoms

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 1, Issue , 2004, Pages 456-459

  Zhao, Q T ^a   Rije, E ^a   Breuer, U ^a   Lenk, St ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FABRICATION; MOSFET DEVICES; NANOTECHNOLOGY; NICKEL COMPOUNDS; SCHOTTKY BARRIER DIODES; SILICA; THERMODYNAMIC STABILITY;

NISI LAYERS; SILICIDES; SULFUR SEGREGATION; WORK FUNCTION;

SULFUR;

EID: 21744449377     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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