Investigation of FinFET devices for 32nm technologies and beyond

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 54-55

  Shang, H ^a   Chang, L ^a   Wang, X ^a   Rooks, M ^a   Zhang, Y ^a   To, B ^a   Babich, K ^a   Totir, G ^a   Sun, Y ^a   Kiewra, E ^a   Ieong, M ^a   Haensch, W ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIN WIDTH VARIATION; RESISTANCE REDUCTION;

ELECTRIC RESISTANCE; EPITAXIAL FILMS; LITHOGRAPHY; POLYSILICON;

FIELD EFFECT TRANSISTORS;

EID: 39549086683     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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3. R. Chau, et al., SSDM, 2002.
4. K. G. Anil, et al., VLSI Tech. Symp. 2005, p. 198
5. Y. X. Liu, et al., IEDM, 2003, p. 986
6. J. A. Choi, et al., IEDM, 2004, p. 647