Device design evaluation of multigate FETs using full 3D process and device TCAD simulation

2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Volumn , Issue , 2007, Pages 401-404

  Nawaz, Muhammad ^a   Decker, Stefan ^a   Giles, Luis Felipe ^a   Molzer, Wolfgang ^a   Schulz, Thomas ^a   Schrüfer, Klaus ^a   Mahnkopf, Reinhard ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DESIGN AUTOMATION; FINS (HEAT EXCHANGE); SEMICONDUCTOR DOPING;

DEVICE PARAMETERS; DEVICE SIMULATIONS; ELECTRICAL PERFORMANCE; FABRICATION PROCESS; MEASUREMENT DATA; NUMERICAL PROCESS; PROCESS SIMULATIONS; TCAD SIMULATION;

SEMICONDUCTOR DEVICES;

EID: 67650172806     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-211-72861-1_97     Document Type: Conference Paper

References (0)