Successful enhancement of metal segregation at NiSi/Si junction through pre-amorphization technique

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 192-193

  Nishi, Yoshifumi ^a   Tsuchiya, Yoshinori ^a   Kinoshita, Atsuhiro ^a   Hokazono, Akira ^a   Koga, Junji ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; MODULATION; NICKEL COMPOUNDS; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); TECHNOLOGY;

PRE-AMORPHIZATION; SCHOTTKY-BARRIER HEIGHT; SOURCE/DRAIN ELECTRODES; SOURCE/DRAIN JUNCTIONS; VLSI TECHNOLOGIES;

METALS;

EID: 51949091650     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588615     Document Type: Conference Paper

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