Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 402-407

  Duffy, R ^a,c   Curatola, G ^a,c   Pawlak, B J ^a,c   Doornbos, G ^a,c   Van Der Tak, K ^b   Breimer, P ^b   Van Berkum, J G M ^b   Roozeboom, F ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c NXP TSMC Research Center   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITIES; ION IMPLANTATION; SILICON; THREE DIMENSIONAL;

ANGLE INCIDENT ION IMPLANTS; FIN FIELD-EFFECT TRANSISTOR (FINFET) STRUCTURE;

FIELD EFFECT TRANSISTORS;

EID: 38849123686     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2816925     Document Type: Article

References (9)

1. Y. K. Choi, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2001, 421.
2. N. Collaert, Technical Digest of the Symposium on VLSI Technology 2006, 52, ISBN: 1-4244-0005-8/06.
3. M. J. H. van Dal, Technical Digest of the Symposium on VLSI Technology 2007, 110, ISBN: 978-4-900784-03-1.
4. A. A. Khajetoorians, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2434000 101, 034505 (2007).
5. A. Nylandsted Larsen, K. Kyllesbech Larsen, P. E. Andersen, and B. G. Svensson, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.353324 73, 691 (1993).
6. A. Agarwal, H. J. Gossman, and D. J. Eaglesham, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.123841 74, 2331 (1999).
7. J. F. Ziegler, SRIM (the stopping and range of ions in matter), http://www.srim.org/
8. SENTAURUS DEVICE User's Manual, Synopsys.
9. R. Duffy, T. Dao, Y. Tamminga, K. van der Tak, F. Roozeboom, and E. Augendre, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2337081 89, 071915 (2006).