N2-annealing effects on characteristics of Schottky-barrier MOSFETS

IEEE Transactions on Electron Devices

Volumn 53, Issue 8, 2006, Pages 1821-1825

  Jang, Moongyu ^a   Kim, Yarkyeon ^a   Jeon, Myungsim ^a   Choi, Cheljong ^a   Baek, Inbok ^a   Lee, Seongjae ^a   Park, Byoungchul ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

Drain induced barrier thinning (DIBT); Interface trap; SB MOSFETs; Scaling; Schottky diode; Subthreshold swing (SS)

Indexed keywords

ANNEALING; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ERBIUM; PLATINUM; SCHOTTKY BARRIER DIODES;

DRAIN-INDUCED BARRIER THINNING (DIBT); INTERFACE TRAP; SUBTHRESHOLD SWING (SS);

MOSFET DEVICES;

EID: 33746644242     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.876575     Document Type: Article

References (8)

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