On voltage acceleration models of time to breakdown - Part II: Experimental results and voltage dependence of weibull slope in the FN regime

IEEE Transactions on Electron Devices

Volumn 56, Issue 7, 2009, Pages 1442-1450

  Wu, Ernest Y ^a   Suñé, Jordi ^b  

^a IBM   (United States)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Dielectric breakdown; Reliability projection; Voltage acceleration models

Indexed keywords

COMPLEMENTARY ANALYSIS; DIELECTRIC BREAKDOWN; EXPERIMENTAL DATABASE; EXPONENTIAL LAW; LONG LASTING; OXIDE BREAKDOWN; OXIDE THICKNESS; POWER LAW MODEL; RELIABILITY PROJECTION; STRESS VOLTAGES; THICK OXIDES; ULTRA-THIN OXIDE; VOLTAGE ACCELERATION; VOLTAGE ACCELERATION MODELS; VOLTAGE DEPENDENCE; WEIBULL SLOPE;

ACCELERATION; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; LEAKAGE CURRENTS; SILICON COMPOUNDS;

ELECTRIC POTENTIAL;

EID: 67650111652     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2021725     Document Type: Article

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