Voltage acceleration of oxide breakdown in the sub-10 nm Fowler-Nordheim and direct tunneling regime

IEEE International Integrated Reliability Workshop Final Report

Volumn 2005, Issue , 2005, Pages 44-48

  Duschl, Rainer ^a   Vollertsen, Rolf Peter ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; MATHEMATICAL MODELS;

DIRECT TUNNELING; FOWLER-NORDHEIM; NFET; POWER-LAW EXPRESSION;

ELECTRIC POTENTIAL;

EID: 33847710715     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2005.1609560     Document Type: Conference Paper

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