Comprehensive physics-based breakdown model for reliability assessment of oxides with thickness ranging from 1 nm up to 12 nm

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 708-717

  Wu, Ernest Y ^a   Suñé, Jordi ^b   Vollertsen, Rolf Peter ^c  

^a IBM MICROELECTRONICS   (United States)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION MODELS; BREAKDOWN MODEL; DEFECT GENERATION; DIRECT TUNNELING; EXPONENTIAL LAW; FOWLER-NORDHEIM; PHYSICS-BASED; PRACTICAL SOLUTIONS; RELIABILITY ASSESSMENTS; THICK OXIDES; THIN OXIDES; TUNNELING CURRENT; VOLTAGE ACCELERATION;

RELIABILITY ANALYSIS; SILICON COMPOUNDS; TUNNELING (EXCAVATION); WIND TUNNELS;

OXIDES;

EID: 70449112595     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173335     Document Type: Conference Paper

References (57)

1. 2 at Low Voltage," Digest of the 2000 Symposium on VLSI Technology, pp.94-95, 2000.
2. R. Degraeve, G. Groesenken, R. Bellens, J. Ogier, M. Depas, P. J. Roussel, and H. E. Maes, "A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides," Digest of the 1995 International Electron Device Meeting, pp.866-869, 1995.
3. J. H. Stathis, "Percolation models for gate oxide breakdown," J. Appl. Phys., vol.86, pp.904-911, 1998.
4. J. Suñé, "New Physics-Based Analytic Approach to the Thin Oxide Breakdown Statistics," IEEE Electron Device Lett., vol.22, p.296-298, 2001.
5. 2 Thin-Films and Their Impact on Time-Dependent Dielectric Breakdown," 1998 International Reliability Physics Symposium Proceedings, pp.47-56, 1998.
6. K.F. Schuegraf and C. Hu. "Metal-oxide-semiconductor fieldeffect-transistor substrate current during Fowler-Nordheim tunneling stress and silicon dioxide reliability," J. Appl. Phys. vol.76, pp.3695-3700, 1994.
7. D. J. DiMaria and J. W. Stasiak, "Trap creation in silicon dioxide produced hot electrons," J. Appl. Phys. vol.65, pp.2342-2355, 1989."
8. C. Hu and Q. Lu, "A Unified Gate Oxide Reliability Model," 1999 International Reliability Physics Symposium Proceedings, pp. 47-51, 1999.
9. M. Alam, J. Budd, and A. Ghetti, "Field Acceleration for Oxide Breakdown - Can An Accurate Anode Hole Injection Model Resolve the E vs. 1/E Controversy?" 2000 International Reliability Physics Symposium, pp.21-26, 2000.
10. N. Shiono and M. Itsumi, "A lifetime Projection Method Using Series Model and Acceleration Factors for TDDB failures of Thin Gate Oxides," 1993 International Reliability Physics Symposium proceedings, pp. 1-6, 1993.
11. 2," 1994 International Reliability Physics Symposium Proceedings, pp.120-125, 1994.
12. R.-P. Vollertsen and W. W. Abadeer, "Modeling considerations and development of upper limits of stress conditions for dielectric breakdown projection," Microelectron. Reliab., vol.36, pp.1019-1031, 1996.
13. M. Kimura, "Oxide Breakdown Mechanism and Quantum Physical Chemistry for Time-Dependent Dielectric Breakdown," 1997 International Reliability Physics Symposium Proceedings, pp.190-200, 1997.
14. 2 under long-term/low field conditions," Digest of the 1998 International Electron Device Meeting, pp.171-174, 1998.
15. A. Teramoto, H. Umeda, K. Kobayashi, K. Shiga, and J. Komori, "Study of Oxide Breakdown under Very Low Electric Field," 1999 International Reliability Physics Symposium Proceedings, pp.66-71, 1999.
16. A. Yassine, H.E. Nariman, M. McBride, and M. Uzer, and Kola R. Olasupo, "Time dependent breakdown of ultra-thin gate oxide," IEEE Tran. Elec. Dev. vol.47, pp.1416-1420, 2000.
17. E. Wu, A. Vayshenker, E. Nowak, J. Suñé, R.-P. Vollertsen, W. Lai, and D. Harmon, "Experimental Evidence of TBD Power-law for Voltage acceleration Factors for Ultra-Thin Gate Oxide," IEEE Trans. Electron Device. Vol.49, pp.2244-2253, 2002.
18. R.-P. Vollertsen, "Thin Dielectric Reliability Assessment for DRAM Technology with Deep Trench Storage Node," Microelectronics Reliability, vol.43, pp.865-878, 2003.
19. R.-P. Vollertsen and E.Y. Wu, "Voltage acceleration and t63.2 of 1.6-10 nm gate oxides," Microelectronics Reliability, vol.44, pp.906-916, 2004.
20. R. Duschl and R.-P. Vollertsen, "Voltage Acceleration of Oxide Breakdown in the sub-10nm Fowler-Nordheim and Direct Tunneling Regime," IEEE International Integrated Reliability Workshop, Final Report, pp.44-48, 2005.
21. R.-P. Vollertsen, T. Pompl, R. Duschl, A. Kerber, M. Kerber, M. Röhner, and R. Schwab, "Long term gate dielectric stress - a timely method?," Digest of the 2006 International Electron Device Meeting, pp. 747-750, 2006.
22. E. Wu and J. Suñé, "Power-law voltage dependence: A key element for ultra-thin gate oxide reliability," Microelectronics Reliability, vol. 45, pp.1809-1834, 2005.
23. Pompl and M. Röhner, "Voltage acceleration of time-dependent breakdown of ultra-thin gate dielectrics," Microelectronics Reliability, vol. 45, pp.1835-1841, 2005.
24. A. Hiraiwa and D. Ishikawa, "Thickness dependent power-law of dielectric breakdown for voltage dependence of oxide breakdown in ultrathin gate oxides," Microelectronics Engineering, vol. 80, pp.374-377, 2005.
25. M. Röhner, A. Kerber, and M. Kerber, "Voltage acceleration of TBD and its correlation to post breakdown conductivity of N- and P-Channel MOSFETS," 2006 International Reliability Physics Symposium, pp. 76-81, 2006.
26. W. McMahon, A. Haggag, and K. Hess, "Reliability Scaling Issues for Nanoscale Devices," IEEE Tran. Nanotechnology vol.2, pp.33-38, 2003.
27. 2 Films," Phys. Rev. Lett., vol. 92, pp.87601 (1-4), 2004.
28. 2 and high-K dielectrics)," IEEE International Integrated Reliability Workshop, Final Report, pp.1-3, 2004.
29. 2-based gate oxides," Digest of the International Electron Device Meeting, pp. 388-391, 2005.
30. A. Haggag, N. Liu, D. Menke, and M. Moosa, "Physical model for the power-law voltage and current acceleration of TDDB," Microelectronics Reliability, Vol. 45, pp.1855-1860, 2005.
31. P. E. Nicollian, A. T. Krishnan, C. A. Chancellor, and R. B. Khamankar, "The traps that causes breakdown in deeply scaled SiON Dielectrics," Digest of the 2006 International Electron Device Meeting, pp.742-746, 2006.
32. M. Rafik, G. Ribes. D. Roy, and G. Ghibaudo, "New understanding on the breakdown of high-K dielectric stacks using multi-vibrational hydrogen release model," 2007 International Reliability Physics Symposium Proceedings, pp.44-48, 2007.
33. R. Duschl, M. Kerber, A. Avellan, S. Jakschik, U. Schroeder, S. Kudelka, "Reliability aspects of Hf-based capacitors: Breakdown and trapping effects," Microelectronics Reliability, vol. 47, pp.497-500, 2007.
34. C. Prasad, et al. "Dielectric breakdown in a 45nm high-K/Metal Gate Process Technology," 2008 International Reliability Physics Symposium Proceedings, pp. 667-668, 2008.
35. www.jedec,org JEP122D
36. 2 dielectrics and reliability implications for hyper-thin gate oxide," Semicond. Sci. Technol., vol.15, pp.462-470, 2000.
37. 2-based Dielectrics Stressed in the FN Regime," submitted to IEEE Transaction on Electron Device,
38. E. Wu, J. Suñé, and W. Lai, "On the Weibull shape factor of dielectric films and its accurate experimental determination, Part II. Experimental results and the effects of stress conditions," IEEE Tran. Electron Devices, vol.49, pp.2141-2150, 2002.
39. E. Wu, S.-H. Lo, W. Abadeer, A. Acovic, D. Buchanan, T. Furukawa, D. Brochu, and R. Dufresne, "Determination of Ultrathin Oxide Voltages and Thickness and The Impact on Reliability Projection," 1997 International Reliability Physics Symposium Proceedings, pp.184-189, 1997.
40. W. Lee and C. Hu, "Modeling CMOS Tunneling Currents Through Ultrathin Gate Oxide Due to Conduction- and Valence-Band Electron and Hole Tunneling," IEEE Trans. Electron Devices, vol. 48, pp. 1366-1373, 2001.
41. D.J. DiMaria, "Explanation for the polarity dependence of breakdown in ultra-thin silicon dioxide films," Appl. Phys. Lett., vol.68, pp.3004-3006, 1996.
42. J. D. Bude, B. E. Weir, and P. J. Silverman, "Explanation of stress-induced damage in thin oxides," Digest of the 1998 International Electron Device Meeting, pp.179-182, 1998.
43. P. Nicollian,W. R. Hunter, J. C. Hu, "Experimental Evidence for Voltage Driven Breakdown Models in Ultrathin Gate Oxides," 2000 International Reliability Physics Symposium Proceedings, pp.7-15, 2000.
44. J. McKenna, E. Wu, and S.-H. Lo, "Tunneling Current Characteristics and Oxide Breakdown in P+Poly Gate PFET Capacitors," 2000 International Reliability Physics Symposium Proceedings, pp.16-20, 2000.
45. E. M. Vogel, J. S. Suehle, M. D. Edelstein, B. Wang, Y. Chen, and J. B. Bernstein, "Reliability of ultrathin Silicon Dioxide Under Combined Substrate Hot-Electron and Constant Voltage Tunneling Stress," IEEE Trans. Electron Devices, vol.47, pp.1183-1191, 2000.
46. T. Pompl, K.-H. Allers, R. Schwab, K. Hofmann, and M. Roehner, "Change of Acceleration Behavior of Time-Dependent Dielectric Breakdown by the BEOL Process: Indications for Hydrogen Induced Transition in Dominant Degradation Mechanism," 2005 International Reliability Physics Symposium Proceedings, pp. 388-397, 2005.
47. D. DiMaria, "Electron energy dependence of metal-oxide-semiconductor degradation," Appl. Phys. Lett., vol. 75, pp.2427-2428, 1999.
48. R. Degraeve, G. Groeseneken, I. DeWolf, and H. Maes, "Oxide and interface degradation and breakdown under medium and high field injection conditions: a correlation study," Microelectronic Engineering, vol. 28, pp.313-316, 1995.
49. 2 Gate Oxides," Microelectronic Engineering, vol.59, pp.149-153, 2001.
50. E. Nadimi, C. Golz, M. Trentzsch, L. Herrmann, K. Wieczorek, and C. Radehaus, "Tunneling Effective Mass of Electrons in Lightly N-doped SiOxNy Gate Insulators," IEEE Trans. Electron Devices, vol. 55, pp.2462-2468, 2008.
51. C. Leroux, P. Amndreucci, and G. Reimbold, "Analysis of oxide breakdown mechanism occurring during ESD pulse," 2000 International Reliability Physics Symposium Proceedings, pp.276-282, 2000.
52. J. Wu and E. Rosenbaum, "Gate Oxide Reliability Under ESDlike Pulse Stress," IEEE Trans. Electron Dev., vol. 51, pp.1528-1532, 2004.
53. B. Weir, C. Leung, P. Silverman, M. A. Alam, "Gate dielectric breakdown in the time-scale of ESD events," Microelectron. Reliab. vol.45, pp.427-436, 2005.
54. A. Kerber, M. Röhner, C. Wallace, L. O'Riain, and M. Kerber, "From Wafer-level gate-oxide reliability towards ESD Failures in Advanced CMOS Technologies," IEEE Trans. Electron Dev., vol. 53, pp.917-920, 2006.
55. A. Kinoshita, Y. Mitani, K. Matsuzawa, H. Kawashima, C. Sutoh, J. Kurihara, T. Hiraoka, I. Hirano, M. Muta, M. Takayanagi, and N. Shigyo, "Breakdown Voltage Prediction of Ultra-thin Gate Insulator in Electrostatic Discharge (ESD) Based on Anode Hole Injection Model," 2006 International Reliability Physics Symposium Proceedings, pp.623-624, 2006.
56. A. Ille, W. Stadler, T. Pompl, H. Gossner, T. Brodbeck, K. Esmark, P. Riess, D. Alvarez, K. Chatty, R. Gauthier, and A. Bravaix, "Reliabilirt Aspects of Gate Oxide under ESD Pulse Stress," EOS/ESD symposium, pp.6A.1.1-10, 2007.
57. W. Abadeer, R.-P. Vollertsen, R. J. Bolam, D. J. DiMaria, and E. Cartier, "Correlation Between Theory and Data for Mechanisms Leading to Dielectric Breakdown," Digest of the 1994 Symposium on VLSI Technology, pp.43-41, 1994.