Field acceleration model for TDDB: Still a valid tool to study the reliability of thick SiO2-based dielectric layers?

IEEE Transactions on Electron Devices

Volumn 54, Issue 7, 2007, Pages 1713-1717

  Oussalah, Slimane ^a,b   Djezzar, Boualem ^b  

^a UNIVERSITÉ DE TOURS   (France)

^b CENTRE DE DÉVELOPPEMENT DES TECHNOLOGIES AVANCÉES   (Algeria)

Author keywords

Oxide breakdown; Reliability; Thick dielectrics; Time dependent dielectric breakdown (TDDB)

Indexed keywords

OXIDE BREAKDOWN; TIME-DEPENDENT DIELECTRIC BREAKDOWN;

ELECTRIC FIELDS; MATHEMATICAL MODELS; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SILICON WAFERS;

ELECTRIC BREAKDOWN;

EID: 34447320200     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.899424     Document Type: Article

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