Gate oxide reliability under ESD-like pulse stress

IEEE Transactions on Electron Devices

Volumn 51, Issue 7, 2004, Pages 1192-1196

  Wu, Jie ^a   Rosenbaum, Elyse ^b  

^a INTEL CORPORATION   (United States)

^b United States of America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC DISCHARGE; GATE OXIDE; OXIDE BREAKDOWN; TIME DEPENDENT DIELECTRIC BREAKDOWN;

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; ELECTROSTATICS; MATHEMATICAL MODELS; MOS CAPACITORS; RELIABILITY; VOLTAGE MEASUREMENT;

GATES (TRANSISTOR);

EID: 4344610614     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.829894     Document Type: Article

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