Voltage acceleration and t63.2 of 1.6-10 nm gate oxides

Microelectronics Reliability

Volumn 44, Issue 6, 2004, Pages 909-916

  Vollertsen, R P ^a   Wu, E Y ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION; DATA ACQUISITION; DATA REDUCTION; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; WEIBULL DISTRIBUTION;

GATE OXIDE RELIABILITY; GATE OXIDES; GATE VOLTAGE; VOLTAGE ACCELERATION;

HETEROJUNCTIONS;

EID: 2442481862     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.02.005     Document Type: Article

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