Gate dielectric breakdown in the time-scale of ESD events

Microelectronics Reliability

Volumn 45, Issue 3-4, 2005, Pages 427-436

  Weir, Bonnie E ^a   Leung, Che Choi ^a   Silverman, Paul J ^a   Alam, Muhammad A ^b  

^a AGERE SYSTEMS   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION MEASUREMENT; DIELECTRIC DEVICES; ELECTRIC POTENTIAL; EXTRAPOLATION; GATES (TRANSISTOR); HOLE MOBILITY; THICKNESS MEASUREMENT; WEIBULL DISTRIBUTION;

DIELECTRIC BREAKDOWN; STATISTICAL EFFECTS; TRANSMISSION LINE PULSE (TLP); VOLTAGE-SCALING;

ELECTRIC DISCHARGES;

EID: 15744364179     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.12.004     Document Type: Article

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