Time-dependent dielectric breakdown of 4H-SiC MOS capacitors and DMOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 1830-1834

  Matocha, Kevin ^a   Dunne, Greg ^a   Soloviev, Stanislav ^a   Beaupre, Richard ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

Failure modes; Reliability; SiC MOS capacitor; SiC MOSFET; Time dependent dielectric breakdown (TDDB)

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRIC EQUIPMENT; ELECTRIC FIELD EFFECTS; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTROMAGNETISM; ENERGY STORAGE; EPITAXIAL LAYERS; FAILURE ANALYSIS; MOLECULAR BEAM EPITAXY; NONMETALS; OPTICAL ENGINEERING; QUALITY ASSURANCE; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE;

COMPONENT RELIABILITY; ELECTRIC FIELD STRESSES; FAILURE MODES; HIGH ELECTRIC FIELDS; HIGH-RELIABILITY; MOS RELIABILITY; NITRIDED OXIDES; OPERATING FIELDS; OXIDE BREAKDOWN; PHYSICAL MECHANISMS; SIC MOS CAPACITOR; SIC MOSFET; SILICON CARBIDE DEVICES; TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB); TIME-DEPENDENT-DIELECTRIC-BREAKDOWN;

MOS CAPACITORS;

EID: 49249117864     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926595     Document Type: Article

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