Mechanisms of hydrogen release in the breakdown of SiO2-based gate oxides

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 388-391

  Suñé, Jordi ^a   Wu, Ernest Y ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; GATE DIELECTRICS; SCANNING TUNNELING MICROSCOPY; SILICA; SILICON;

ELECTRONIC EXCITATION; HYDROGEN RELEASE (HR);

HYDROGEN;

EID: 33847723900     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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