Oxide reliability: A new methodology for reliability evaluation at parametric testing

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2006, Pages 142-145

  Bottini, R ^a   Sebastiani, A ^a   Galbiati, N ^a   Scozzari, C ^a   Ghidini, G ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; DIELECTRIC MATERIALS; EMBEDDED SYSTEMS; FLASH MEMORY; RELIABILITY ANALYSIS; STRESS ANALYSIS;

PARAMETRIC TESTING; RELIABILITY CHARACTERIZATION; THICK GATES; TUNNEL OXIDES;

GATES (TRANSISTOR);

EID: 34548237944     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2006.305230     Document Type: Conference Paper

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