Determination of ultra-thin oxide voltages and thickness and the impact on reliability projection

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1997, Pages 184-189

  Wu, E ^a   Lo, S H ^a   Abadeer, W ^a   Acovic, A ^a   Buchanan, D ^a   Furukawa, T ^a   Brochu, D ^a   Dufresne, R ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; INTEGRATION; OXIDES; RELIABILITY; SEMICONDUCTOR DEVICE STRUCTURES; ULTRATHIN FILMS;

BERGLUND INTEGRATION TECHNIQUE; QUANTUM INTERFERENCE TECHNIQUES;

FIELD EFFECT TRANSISTORS;

EID: 0030645892     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)