SCOPUS 정보 검색 플랫폼

MRS Bulletin

Volumn 34, Issue 5, 2009, Pages 334-340

Semipolar III nitride semiconductors: Crystal growth, device fabrication, and optical anisotropy

(2) Funato, Mitsuru a Kawakami, Yoichi a

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; EPITAXIAL FILMS; FABRICATION; LASER MIRRORS; LIGHT POLARIZATION; OPTICAL ANISOTROPY; POLARIZATION; QUANTUM WELL LASERS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

DEVICE FABRICATIONS; HIGH QUALITY EPITAXIAL FILMS; III-NITRIDE SEMICONDUCTORS; INGAN/GAN QUANTUM WELL; INTERNAL ELECTRIC FIELDS; OPTICAL TRANSITION PROBABILITY; POLARIZATION ANISOTROPY; VISIBLE LIGHT EMITTERS;

ANISOTROPY;

EID: 66749177199 PISSN: 08837694 EISSN: None Source Type: Journal
DOI: 10.1557/mrs2009.96 Document Type: Article

Times cited : (22)

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