Optical polarization characteristics of InGaNGaN light-emitting diodes fabricated on GaN substrates oriented between (10 1- 0) and (10 1- 1-) planes

Applied Physics Letters

Volumn 92, Issue 9, 2008, Pages

  Masui, Hisashi ^a   Yamada, Hisashi ^a   Iso, Kenji ^a   Nakamura, Shuji ^a   Denbaars, Steven P ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONFOCAL MICROSCOPY; ELECTROLUMINESCENCE; LIGHT POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS;

EMISSION SPECTRA; PEAK SHIFTS; POLARIZATION RATIO;

LIGHT EMITTING DIODES;

EID: 40549121285     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2890050     Document Type: Article

References (14)

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