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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 3 B, 1996, Pages

Reflection high energy electron diffraction intensity oscillations during the growth of ZnSe on cleaved GaAs(110) surface by molecular beam epitaxy

(6) Ko, Hyun Chul a Yamaguchi, Shigeo a Kurusu, Hitoshi a Kawakami, Yoichi a Fujita, Shizuo a Fujita, Shigeo a

a KYOTO UNIVERSITY (Japan)

Author keywords

Cleaved edge overgrowth; GaAs(100); MBE; RHEED oscillation; ZnSe

Indexed keywords

CRYSTAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; QUANTUM EFFICIENCY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACES; TEMPERATURE; X RAY CRYSTALLOGRAPHY;

CLEAVED EDGE OVERGROWTH; DOUBLE CRYSTAL X RAY DIFFRACTION MEASUREMENT; PARTIAL BEAM PRESSURE; ULTRAHIGH VACUUM; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030100553 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.l366 Document Type: Article

Times cited : (21)

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