Optical anisotropy of excitons in strained GaN epilayers grown along the 〈101¯0〉 direction

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 19, 1997, Pages 12446-12453

  Gil, Bernard ^a   Alemu, Andenet ^a  

^a CNRS   (France)

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[No Author keywords available]

Indexed keywords

EID: 0001391697     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.12446     Document Type: Article

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