Strained M-plane GaN for the realization of polarization-sensitive photodetectors

Applied Physics Letters

Volumn 81, Issue 18, 2002, Pages 3380-3382

  Ghosh, Sandip ^a   Brandt, O ^a   Grahn, H T ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; BAND EDGE TRANSITION; GAN FILM; IN-PLANE STRAINS; LIGHT INCIDENT; M-PLANE; NORMALLY ON; OPERATING WAVELENGTH; OSCILLATOR STRENGTHS; POLARIZATION ANISOTROPY; STRAIN DEPENDENCE; WAVELENGTH RANGES; WURTZITE GAN;

ANISOTROPY; PHOTODETECTORS; POLARIZATION; ZINC SULFIDE;

GALLIUM NITRIDE;

EID: 79956022798     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1517408     Document Type: Article

References (14)

1. C. J. Chen, K. K. Choi, L. Rokhinson, W. H. Chang, and D. C. Tsui, Appl. Phys. Lett. 74, 862 (1999). apl APPLAB 0003-6951
2. E. Greger, P. Riel, M. Moser, T. Kippenberg, P. Kiesel, and G. H. Döhler, Appl. Phys. Lett. 71, 3245 (1997). apl APPLAB 0003-6951
3. J. Krauss, T. Kippenberg, J. Spieler, P. Kiesel, G. H. Döhler, and M. Moser, Electron. Lett. 35, 1878 (1999). ell ELLEAK 0013-5194
4. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature (London) 406, 865 (2000). nat NATUAS 0028-0836
5. S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, Appl. Phys. Lett. 80, 413 (2002). apl APPLAB 0003-6951
6. S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, Phys. Rev. B 65, 075202 (2002). prb PRBMDO 0163-1829
7. M. Suzuki, T. Uenoyama, and A. Yanase, Phys. Rev. B 52, 8132 (1995). prb PRBMDO 0163-1829
8. ij denote the elastic constants.
9. G. L. Bir and G. E. Pikus, Symmetry and Strain Induced Effects in Semiconductors (Wiley, New York, 1974).
10. M. Suzuki and T. Uenoyama, Jpn. J. Appl. Phys., Part 1 35, 543 (1996). jjb JAPNDE 0021-4922
11. VB=-4.7eV. The exciton binding energy was taken to be 26 meV in all cases. The strain-free exciton-transition wavelengths at 295 K were 363.6 nm, 362.8 nm, and 360.4 nm.
12. A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A. Kuramata, K. Horino, and S. Nakamura, J. Appl. Phys. 81, 417 (1997). jap JAPIAU 0021-8979
13. A. Polian, M. Grimsditch, and I. Grzegory, J. Appl. Phys. 79, 3343 (1996). jap JAPIAU 0021-8979
14. K. Domen, K. Horino, A. Kuramata, and T. Tanahashi, Appl. Phys. Lett. 70, 987 (1997). apl APPLAB 0003-6951